METHOD FOR SEPARATION OF INTEGRATED CIRCUITS BY RELIABILITY Russian patent published in 2022 - IPC G01R31/303 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics, namely to methods for provision of quality and reliability of integrated circuits; it can be used both in a production process and at input control in enterprises-manufacturers. On a representative sample of integrated circuits, in each integrated circuit, an information parameter is measured at a normal temperature with nominal and critical power supply voltages, before and after impact on each pair of “input-output” terminals of the integrated circuit with 20 electrostatic discharges of both polarities with voltage maximum permissible, according to technical conditions, for this type of integrated circuits. Change in the information parameter is determined by calculation of the difference between parameter values before and after impact with 20 electrostatic discharges. Arithmetic mean of change in the information parameter with nominal and critical power supply voltages is calculated. Those integrated circuits, for which arithmetic mean of change in the information parameter is approximately 4-5 times higher than the minimum average value of change in the information parameter in the sample, are related to potentially unreliable products.

EFFECT: reduction in labor intensity and time for testing.

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