PROCEDURE FOR REJECTION OF BIPOLAR TRANSISTORS Russian patent published in 2003 - IPC

FIELD: electrical engineering, radio electronic industry. SUBSTANCE: procedure is specifically meant for rejection of bipolar transistors according to such criteria as reliability and resistance to electrostatic discharges, increase of authenticity of other methods of rejection both in process of their manufacture and during incoming control at factories-manufacturers of radio electronic hardware. Rejection includes two stages. At first stage transistors are rejected by degree of change of area under curve of dependence of amplification factor on collector current β = f(I_k) caused by effect of electrostatic discharges. Transistors which fall by results of first stage in sublot with enhanced reliability and resistance to electrostatic discharge are fired at maximum permissible temperature given in specifications for transistors in the course of 1-4 h and are finally rejected by degree of restoration of area under curve β = f(I_k) with reference to initial value measured before test with electrostatic discharge. Area under curve β = f(I_k) is taken as informative parameter. Primary rejection of transistors is conducted by relative change of area under curve after action of electrostatic discharge and final rejection is carried out by change of area under curve after firing. EFFECT: enhanced authenticity of rejection of transistors with giving any rise uncontrolled defects. 3 dwg