FIELD: microelectronics, namely, methods for ensuring quality and reliability of variable-capacitance diodes, possible use for culling potentially unreliable devices, and also for selecting high reliability devices both at production and application stages.
SUBSTANCE: in accordance to invention, measurement of maximal capacity of variable-capacitance diodes is performed prior to influence of electrostatic discharge, after influence of electrostatic discharge and after temperature annealing. Devices with voltage of allowed potential, indicated in technical conditions for the device, are subjected to influence of electrostatic discharge. On basis of relation of maximal capacity of variable-capacitance diodes after temperature annealing to original value, their potential reliability is evaluated.
EFFECT: increased trustworthiness.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| PROCEDURE ESTABLISHING POTENTIALLY UNRELIABLE SEMICONDUCTOR DEVICES | 2002 |
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| METHOD OF INTEGRATED CIRCUIT DIVISION UPON RELIABILITY CRITERION | 2006 |
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| MODE OF SEPARATION INTEGRAL SCHEMES ACCORDING TO RELIABILITY | 2005 |
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| METHOD OF SCREENING LOW-QUALITY SEMICONDUCTOR ARTICLES FROM BATCHES OF HIGH-RELIABILITY ARTICLES | 2011 |
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| METHOD OF SELECTIVE TEST OF RELIABILITY OF TRANSISTORS IN LOT | 2001 |
|
RU2204142C2 |
