FIELD: electric engineering, possible use for selecting semiconductor devices with increased reliability from a batch.
SUBSTANCE: method includes performing measurement of transfer characteristics of devices in direct current range 1-110 mA, thrice: before, after effect of 5-15 electrostatic discharges in direct and reverse direction on each transfer by voltage, equal to allowed value in accordance to technical conditions, and after thermal annealing during 4-8 hours. Temperature of annealing is calculated from formula Tann=Tall+RT·P, where Tann and Tall - temperatures of annealing and maximal allowed by technical conditions respectively, RT - thermal resistance crystal-body, P - extreme device power allowed by technological conditions. On basis of three values of m-characteristics satisfying the formula, 1≤m≤A, selection of devices is performed. Value A is set on basis of statistics on representing selection for each type of device.
EFFECT: expanded functional capabilities.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF SELECTION OF HIGHLY RELIABLE INTEGRAL PRINTED CIRCUITS | 2005 |
|
RU2295735C1 |
| METHOD OF SELECTING SEMICONDUCTOR DEVICES WITH INCREASED RELIABILITY | 2007 |
|
RU2339964C2 |
| METHOD FOR DETERMINATION OF POTENTIALLY UNSTABLE SEMICONDUCTOR DEVICES | 2003 |
|
RU2234104C1 |
| METHOD OF COMPARATIVE TEST FOR RELIABILITY OF BATCHES OF INTEGRATED CIRCUITS | 2012 |
|
RU2546998C2 |
| SEPARATION METHOD OF SEMI-CONDUCTING ITEMS AS TO RELIABILITY | 2008 |
|
RU2374658C1 |
| METHOD FOR SCREENING POTENTIALLY UNRELIABLE INTEGRAL CIRCUITS | 2004 |
|
RU2276378C1 |
| METHOD OF INTEGRATED CIRCUIT DIVISION UPON RELIABILITY CRITERION | 2006 |
|
RU2324194C1 |
| PROCEDURE FOR REJECTION OF BIPOLAR TRANSISTORS | 2001 |
|
RU2204143C2 |
| MODE OF SEPARATION INTEGRAL SCHEMES ACCORDING TO RELIABILITY | 2005 |
|
RU2290652C2 |
| METHOD FOR SEPARATING BIPOLAR TRANSISTORS ON BASIS OF STABILITY OF BACK CURRENTS | 2003 |
|
RU2242018C1 |
