METHOD FOR SEPARATING BIPOLAR TRANSISTORS ON BASIS OF STABILITY OF BACK CURRENTS Russian patent published in 2004 - IPC

Abstract RU 2242018 C1

FIELD: electrical engineering.

SUBSTANCE: method includes controlling starting value of back current, testing of transistor by three cycles of electrostatic charges, measuring value of back current after effect from electrostatic charge, measuring starting back current, back current after effect from three cycles of back current and after thermal burning. Potential of electrostatic charge is set to be equal to potential acceptable according to technical conditions. On basis of measurements a coefficient is calculated, characterizing stability of back currents.

EFFECT: higher efficiency.

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RU 2 242 018 C1

Authors

Gorlov M.I.

Andreev A.V.

Emel'Janov V.A.

Litvinenko D.A.

Smirnov D.Ju.

Dates

2004-12-10Published

2003-04-17Filed