FIELD: provision of quality and reliability of lots of semiconductor devices owing to determination of potentially unstable devices both in the stage of production and use.
SUBSTANCE: at the representative sample of semiconductor devices of the same type the noise before and after action by an electrostatic discharge allowable by the specifications of the potential is measured. Then, isothermic and isochronic firing of electrostatic defects within a temperature range from 70 to 150C is performed during a time period required for recovery of the initial parameters.
EFFECT: enhanced truth and expanded functional potentialities.
1 ex, 4 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF INTEGRATED CIRCUIT DIVISION UPON RELIABILITY CRITERION | 2006 |
|
RU2324194C1 |
| METHOD FOR DETECTING POTENTIALLY UNSTABLE SEMICONDUCTOR DEVICES | 2003 |
|
RU2249227C1 |
| PROCEDURE ESTABLISHING POTENTIALLY UNRELIABLE SEMICONDUCTOR DEVICES | 2002 |
|
RU2230335C1 |
| SEPARATION METHOD OF SEMI-CONDUCTING ITEMS AS TO RELIABILITY | 2008 |
|
RU2374658C1 |
| METHOD FOR SELECTING SEMICONDUCTOR DEVICES WITH HIGH RELIABILITY | 2004 |
|
RU2276379C1 |
| METHOD OF RELIABILITY SEPARATION OF SEMICONDUCTOR DEVICES | 2004 |
|
RU2258234C1 |
| METHOD OF SELECTION OF HIGHLY RELIABLE INTEGRAL PRINTED CIRCUITS | 2005 |
|
RU2295735C1 |
| METHOD FOR SELECTING A GROUP OF HIGH RELIABILITY DEVICES FROM A BATCH OF VARIABLE CAPACITANCE DIODES | 2005 |
|
RU2303790C1 |
| PROCEDURE FOR REJECTION OF BIPOLAR TRANSISTORS | 2001 |
|
RU2204143C2 |
| METHOD FOR SCREENING POTENTIALLY UNRELIABLE INTEGRAL CIRCUITS | 2004 |
|
RU2276378C1 |
