FIELD: physics; electricity.
SUBSTANCE: m-characteristics are measured in a direct current range (1-100 mA) before and after passing a current pulse, with amplitude 1.5-3 times more than the maximum permissible value given by the technical specifications. Selection of the device with increased reliability is done on the basis of the criteria 
where mp - is the maximum value of parameter m after effect of the current pulse, mi - is the maximum value of parameter m in the initial state. Value A is established based on statistics of the representative sampling of each type of device.
EFFECT: increased authenticity and wider functional capabilities.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR SELECTING SEMICONDUCTOR DEVICES WITH HIGH RELIABILITY | 2004 |
|
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| METHOD OF SELECTION OF HIGHLY RELIABLE INTEGRAL PRINTED CIRCUITS | 2005 |
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| METHOD FOR DETECTING A PRIORI DEFECTIVE TRANSISTORS | 2003 |
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| METHOD OF SEPARATION OF INTEGRATED CIRCUITS | 2005 |
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| METHOD FOR DETERMINATION OF POTENTIALLY UNSTABLE SEMICONDUCTOR DEVICES | 2003 |
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| SEPARATION METHOD OF SEMI-CONDUCTING ITEMS AS TO RELIABILITY | 2008 |
|
RU2374658C1 |
| METHOD FOR SCREENING POTENTIALLY UNRELIABLE INTEGRAL CIRCUITS | 2004 |
|
RU2276378C1 |
