FIELD: engineering of powerful semiconductor devices, possible use for engineering of thyristors with decreased amplitude of reverse regeneration current and increased shape coefficient of reverse regeneration current.
SUBSTANCE: in known thyristor, in highly alloyed anode emitter layer of p+ conductivity type, positioned in anode emitter layer of p conductivity type on the side, opposite to wide base area, channels of p conductivity type are formed, connecting anode area and ohmic contact to highly alloyed anode emitter layer, having lower conductivity, than highly alloyed anode emitter layer.
EFFECT: decreased amplitude of reverse regeneration current and increased shape coefficient of reverse regeneration current of thyristor.
1 tbl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| MULTI-EPITAXIAL STRUCTURE OF DOUBLE-INJECTION HIGH-VOLTAGE HYPER-FAST RECOVERY DIODE CHIP BASED ON GALLIUM AND ARSENIC | 2011 |
|
RU2531551C2 |
| LASER-THYRISTOR | 2019 |
|
RU2724244C1 |
| SEMICONDUCTOR DEVICE WITH SELF-PROTECTION FROM DISRUPTION DURING PERIOD OF RESTORATION OF LOCKING PROPERTIES | 2005 |
|
RU2297075C1 |
| METHOD FOR SWITCHING BACKWARD CONDUCTANCE THYRISTOR | 0 |
|
SU1003699A1 |
| THYRISTOR TRIODE-THYROID | 2005 |
|
RU2306632C1 |
| HIGH-VOLTAGE POWER DIODE CRYSTAL WITH SCHOTTKY BARRIER AND P-N JUNCTIONS | 2023 |
|
RU2805563C1 |
| 0 |
|
SU1785055A1 | |
| THYRISTOR LASER | 2019 |
|
RU2726382C1 |
| HIGH-VOLTAGE HIGH-TEMPERATURE QUICK-ACTING THYRISTOR WITH FIELD CONTROL | 2010 |
|
RU2472248C2 |
| LASER-THYRISTOR | 2013 |
|
RU2557359C2 |
