THYRISTOR TRIODE-THYROID Russian patent published in 2007 - IPC H01L29/74 

FIELD: semiconductor electronics; semiconductor bipolar devices using thyristor-type structure.

SUBSTANCE: proposed semiconductor bipolar device in the form of p-n-p-n thyristor triode designed for rectifying, amplifying, switching, or generating electric signals has four layers of different polarity of conductivity, p anode, intermediate n and p layers, and n cathode. Intermediate n and p layers have common lead that functions as triode emitter. Anode is connected to function as triode base and anode p-n junction is connected during electron-hole plasma injection to intermediate n and p layers. Cathode is connected to function as triode collector and cathode p-n junction functions to deplete intermediate p layer.

EFFECT: enhanced operating current of device when running as amplifier.

1 cl, 10 dwg