MULTI-EPITAXIAL STRUCTURE OF DOUBLE-INJECTION HIGH-VOLTAGE HYPER-FAST RECOVERY DIODE CHIP BASED ON GALLIUM AND ARSENIC Russian patent published in 2014 - IPC H01L29/861 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor devices. A multi-epitaxial structure of a double-injection high-voltage hyper-fast recovery diode chip based on gallium and arsenic compounds comprises a heavily doped monocrystalline substrate of p⁺-type conductivity, with differential concentration of acceptor and donor dopants of not more than 3·10¹⁸ cm^-3 and thickness of not more than 200 mcm, an epitaxial GaAs layer made thereon, having p-type conductivity with thickness of not more than 5.0 mcm and differential concentration of donor and acceptor dopants which varies from concentration in the substrate to values of not more than $$\sqrt{\mathrm{2,22}}\cdot {10}^{11}c{m}^{-3},$$ an epitaxial GaAs i-layer with thickness of 5-100 mcm having p-n-junction type conductivity and a space-charge region, and an inner-lying multi-epitaxial metal junction area, and an epitaxial GaAs layer on a p-n junction epitaxial i-layer, having n⁺-type conductivity with differential concentration of acceptor and donor dopants in the surface layer of not less than 1·10¹⁷ cm^-3 and thickness of not less than 0.1 mcm.

EFFECT: invention prevents forward potential drop, increases forward biasing current and operating speed.

2 cl, 3 dwg