THROUGH FOR HOLDING SILICON WAFERS IN SEMICONDUCTOR DEVICE MANUFACTURE Russian patent published in 2006 - IPC H01L21/68 

FIELD: means for holding silicon wafers during heat treatment.

SUBSTANCE: proposed trough has four parallel quartz-crystal rods with slots made therein which are joined together in definite manner so that two rods are disposed higher than two other ones; horizontal axes of cross-sectional areas of two upper rods are disposed at elevation of silicon-wafer horizontal axis equal to 0.5 of wafer diameter; slots of upper rods are U-shaped and those of lower rods, V-shaped.

EFFECT: eliminated loss of wafers during their transfer.

1 cl, 1 dwg