FIELD: radio engineering and communications, possible use as input, output and intermediate cascades of analog micro-chips of varying functional purposes (high frequency and ultra high frequency amplifiers, broadband operational amplifiers, quick continuous voltage stabilizers, signal multipliers, etc).
SUBSTANCE: technical effect is achieved due to simultaneous minimization of influence on fu from parasitic parameters - substrate capacity (Cs) of bearing current source, which for micro-chips with isolation by p-n-transition lies within limits 2-5 pF, and capacitors of collector transition of input transistor (Cc,-0,5-3 pF). Amplifier contains (dwg.2) input and additional transistors 1,10, collectors of which are connected to main and additional outputs 3,11 of amplifier, and emitters are connected to bearing current sources 4,12 by their parasitic capacitors 5,13, while adder 14 is connected to outputs 3,11 of amplifier.
EFFECT: increased upper limiting frequency of amplifier fu.
5 cl, 10 dwg
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Authors
Dates
2006-09-27—Published
2005-01-28—Filed