FIELD: microelectronics; memory device manufacture.
SUBSTANCE: novelty is that insulator layer in proposed memory location whose storage element incorporates first electrode, second electrode, and insulator layer disposed between mentioned electrodes is made of N > 1 separate polymeric films of essentially equal thickness d < 80 μm produced from same material and in similar way, and piled.
EFFECT: enhanced insulator capability of charging and holding electric charges between electrodes.
3 cl, 1 dwg
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