TRANSISTOR AND METHOD OF MAKING SAID TRANSISTOR Russian patent published in 2009 - IPC H01L29/06 B82B1/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor electronics and can be used for making heavy duty and high-precision transistors. The transistor contains a first set, which includes N₁>1000000 regions with the same conductivity, a second set which includes N₂ >1000000 regions with the same conductivity, as well as a third set, which includes N₃>1000000 regions with opposite conductivity. The regions are made with formation of a first set of separate same-type point p-n junctions between regions from the first and third sets and a second set of separate same-type point p-n junctions between regions from the second and third sets. Electrodes, adjacent regions included in at least one of the said sets, for which the condition N_i>1000000, where i∈{1, 2, 3}, is satisfied, are connected in parallel by one conductor, i.e. are connected into a single current node.

EFFECT: obtaining high-precision heavy duty transistors with stable electrical parametres.

21 cl, 9 dwg