FIELD: electronic engineering; microwave hybrid integrated circuits.
SUBSTANCE: proposed microwave hybrid integrated circuit has hole in heat-transfer metal base directly under insulating substrate hole, its sectional area being commensurable with the latter hole, which accommodates part of heat-transfer metal insert; the latter is connected to side surfaces of insulating substrate holes and to heat-transfer metal base; clearance between them is smaller than or equal to 0.4 mm and height of heat-transfer metal insert is smaller than or equal to total thickness of heat-transfer metal base and insulating substrate by height of semiconductor device chip.
EFFECT: enhanced reliability due to higher mechanical strength of connections and better heat transfer from semiconductor device chip.
2 cl, 2 dwg
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Authors
Dates
2006-12-27—Published
2004-12-09—Filed