MICROWAVE HYBRID INTEGRATED CIRCUIT Russian patent published in 2007 - IPC H01L25/16 

FIELD: electronic engineering; microwave hybrid integrated circuits.

SUBSTANCE: proposed microwave hybrid integrated circuit has insulating substrate bearing conductor pattern on its face side and grounding screen conductors, on its underside. Insulating substrate rear side is disposed on metal heat-transfer base and connected thereto; it also has hole accommodating heat-and-electricity conducting metal insert with semiconductor device chip disposed on its butt end at substrate face side and connected thereto; capacitor chips are mounted on two opposite ends of device at distance of maximum 0.5 mm from the latter. Height of metal-and-electricity conducting insert at location point of semiconductor device and capacitor chips is smaller than insulating substrate thickness by their respective height and clearance between substrate hole walls, and two other sides of semiconductor device chip is not over 0.2 mm.

EFFECT: improved power characteristics, reduced mass and size, facilitated manufacture, enlarged functional capabilities at desired strength.

3 cl, 1 dwg