HIGH-POWER HYBRID MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2007 - IPC H01L25/11 H05K1/18 

FIELD: electronic engineering; high-power microwave integrated circuits.

SUBSTANCE: proposed device has transistors in the form of chips with flat heavy-current leads. Current-carrying metal base has projection aligned with insulating substrate hole and disposed in this hole, its height being such that its upper surface is flush with face side of insulating substrate. Depression provided on upper surface of projection is of through type on end of flat heavy-current leads of chip of one of transistors connected to metal coat of topological pattern. At least one contact pad provided with and connected to plate readily conducting heat and electricity is made on upper surface of heat-conducting metal base at least on one end of chip of one of transistors, its size being equal to or greater than 0.3 x 0.3 mm. This metal plate has at least one groove holding chip of other transistor; it is through groove on side of heavy-current leads connected to metal coat of topological pattern; it is of same size as the latter and its bottom thickness is 0.1-0.5 mm. Other flat heavy-current leads of transistor chips are connected to projection on heat-conducting metal base.

EFFECT: enhanced reliability of heat transfer and power characteristics of hybrid integrated circuit.

6 cl, 9 dwg