POWERFUL HYBRID INTEGRAL CIRCUIT OF MICROWAVE RANGE Russian patent published in 2012 - IPC H01L25/16 

Abstract RU 2458432 C1

FIELD: electricity.

SUBSTANCE: in a powerful hybrid integral circuit of microwave range comprising a dielectric substrate arranged with a reverse side on a metal heat-spreading base, in the dielectric substrate there is a hole, and on the metal heat-spreading base there is ledge, which in plan matches the hole in the dielectric substrate, on the upper plane of the heat-spreading base ledge there is a groove, through from the side of flat beam outputs of transistor crystals, on the upper plane of the heat-spreading base ledge at two sides of the crystal in one of transistors there are mount sides, equipped with a highly heat conductive plate, in a highly heat conductive plate there is a groove, where one crystal of other transistor is arranged and fixed. The highly heat conductive plate is arranged as a single one for crystals of transistors of each pair, at the same time the distance between pairs of transistors S and heat conductivity X of the plate material are defined according to the proposed condition.

EFFECT: higher manufacturability of circuit design, improved electric properties and heat removal from transistor crystals.

3 cl, 2 dwg, 1 tbl

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Authors

Iovdal'Skij Viktor Anatol'Evich

Ganjushkina Nina Valentinovna

Pchelin Viktor Andreevich

Dates

2012-08-10Published

2011-04-18Filed