FIELD: electricity.
SUBSTANCE: in a powerful hybrid integral circuit of microwave range comprising a dielectric substrate arranged with a reverse side on a metal heat-spreading base, in the dielectric substrate there is a hole, and on the metal heat-spreading base there is ledge, which in plan matches the hole in the dielectric substrate, on the upper plane of the heat-spreading base ledge there is a groove, through from the side of flat beam outputs of transistor crystals, on the upper plane of the heat-spreading base ledge at two sides of the crystal in one of transistors there are mount sides, equipped with a highly heat conductive plate, in a highly heat conductive plate there is a groove, where one crystal of other transistor is arranged and fixed. The highly heat conductive plate is arranged as a single one for crystals of transistors of each pair, at the same time the distance between pairs of transistors S and heat conductivity X of the plate material are defined according to the proposed condition.
EFFECT: higher manufacturability of circuit design, improved electric properties and heat removal from transistor crystals.
3 cl, 2 dwg, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
HIGH-POWER HYBRID MICROWAVE INTEGRATED CIRCUIT | 2005 |
|
RU2298255C1 |
POWER HYBRID MICROWAVE INTEGRATED CIRCUIT | 2009 |
|
RU2390071C1 |
HIGH-POWER MICROWAVE HYBRID INTEGRATED CIRCUIT | 2023 |
|
RU2817537C1 |
HYBRID MICROWAVE-FREQUENCY INTEGRATED CIRCUIT | 2011 |
|
RU2489770C1 |
POWERFUL HYBRID INTEGRAL CIRCUIT OF SHF RANGE | 2012 |
|
RU2498455C1 |
HYBRID INTEGRATED MICROWAVE CIRCUIT | 2009 |
|
RU2390877C1 |
MICROWAVE HYBRID INTEGRATED CIRCUIT | 2004 |
|
RU2290719C2 |
MICROWAVE HYBRID INTEGRATED CIRCUIT | 2005 |
|
RU2302056C1 |
HYBRID INTEGRATED CIRCUIT OF SHF RANGE | 2010 |
|
RU2450388C1 |
METHOD TO MAKE HYBRID INTEGRAL CIRCUIT OF MICROWAVE BAND | 2013 |
|
RU2521222C1 |
Authors
Dates
2012-08-10—Published
2011-04-18—Filed