HIGH-POWER MICROWAVE HYBRID INTEGRATED CIRCUIT Russian patent published in 2024 - IPC H01L25/11 H01L27/12 H05K1/18 

FIELD: electronic equipment.

SUBSTANCE: hybrid integrated circuit comprises a dielectric substrate with a topological pattern on the front and back sides, located on the reverse side by a heat-removing base and connected to it by earthing metallization, pair of chips of semiconductor devices with flat beam terminals, connected to contact pads on the front side and to each other, each of the chips contains transistors, on the heat-removing base there is a protrusion on which one of the chips is installed, wherein the protrusion height provides the arrangement of the front side of the chip in the same plane with the front side of the dielectric substrate, part of the beam terminals is connected to the topological pattern of metallization, the upper chip is connected by the reverse side to the plate made of electrically heat-conducting material, edges of the plate protrude beyond the limits of the second chip, on the upper plane of the protrusion of the base on both sides of the lower chip there are two mounting platforms, chips are located with their front sides to each other, chips are made in the form of monolithic integrated circuits of power amplifiers, on one part of the dielectric substrate there is an input transmission line of the input microwave signal, on the other – the output microwave signal transmission line, a heat-conducting plate with thickness of 0.1 to 0.5 mm, with edges fixed on mounting sites with size of 0.3×0.3 mm to 3.0×5.0 mm, made along the perimeter of the chip, the height of the protrusion of the metal base in the locations of the mounting pads is increased to the edges of the plate, at the edges of the electrically heat-conducting plate, at the points of the beam terminals, at the points of the input and output transmission lines of the microwave signal, samples are made with a depth to the power amplifier chips, additional components are installed on the metal base on both sides of chips of integrated circuits of power amplifiers, which form their power supply circuits, which are electrically connected to beam terminals of the chips and to each other.

EFFECT: invention provides improved electrical and weight and size characteristics of a powerful hybrid integrated circuit in the microwave range.

3 cl, 4 dwg