METHOD TO MAKE HYBRID INTEGRAL CIRCUIT OF MICROWAVE BAND Russian patent published in 2011 - IPC H01L21/84 

FIELD: electricity.

SUBSTANCE: method to make hybrid integral circuit of microwave band includes manufacturing of a topological pattern of film conductors metallisation on the face side of a dielectric substrate and at least one mounting site to arrange at least one crystal of hinged component, making a pattern of flat film connecting internal circuit conductors at one side of the film polymer carrier, which comprises at least one group for connection of active semiconductor instrument, manufacturing of holes in polymer carrier, connection of internal ends of film connecting internal circuit conductors with contact sites of at least one crystal of active hinged component - a semiconductor instrument, fixation of active component crystals at mounting sites, connection of external ends of a group of film connecting internal circuit conductors to film conductors of the topological pattern, fixation of crystals of passive components, making film connecting internal circuit conductors on the polymer carrier to carry out all connections. Ends of conductors are connected to the topological pattern directly or by means of passive components, then the film carrier is removed.

EFFECT: improvement of electrical characteristics, reduced labour intensity of manufacturing and increased reliability of hybrid integrated circuit.

5 cl, 4 dwg