HYBRID MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2013 - IPC H01L25/16 

FIELD: physics.

SUBSTANCE: hybrid microwave integrated circuit has a dielectric substrate with a topological metallisation pattern on the front side and a screen earthing metallisation on the reverse side; chips of add-on components: active - semiconductor devices and passive - capacitors, lying on the front side of the substrate and connected to the topological metallisation pattern; on the front surface of the substrate there is a film-type polymer support on the outer side of which there are flat film-type in-circuit connecting leads which are connected to terminal pads of the active and passive add-on components and the topological metallisation pattern through through-holes made in the polymer support. The thickness of the polymer support ranges from 5 to 100 mcm and permittivity of the polymer ranges from 1.5 to 8.0. In the film-type polymer support, along the film-type conductors of the topological metallisation pattern and at a distance therefrom of not more than 1 mm, as well as under the in-circuit connecting leads, there are additional holes with density ranging from 10% to 90% of the total area of the polymer support.

EFFECT: improved electrical characteristics and high manufacturability of the hybrid integrated circuit.

5 cl, 10 dwg, 2 tbl