MEASURING SYSTEM WITH SEMICONDUCTOR TRANSDUCER BUILT AROUND SILICON CARBIDE SCHOTTKY-BARRIER DIODE Russian patent published in 2004 - IPC

FIELD: microelectronics; temperature and/or ultraviolet radiation measuring systems. SUBSTANCE: measuring system designed to measure temperature and to record ultraviolet rays with aid of single transducer under high-temperature conditions has semiconductor transducer built around silicon carbide Schottky-barrier diode that incorporates substrate of single-crystalline n⁺ silicon carbide with epitaxial n layer; ohmic electrode connected to n⁺ region of substrate; insulating coating applied to n layer of substrate on end opposing n⁺ region of substrate; rectifying electrode of semi- transparent Au layer connected to n layer of substrate to form Schottky-barrier contact through window made in insulating layer; and output contact connected to rectifying electrode. External electric circuit connected between output contact and ohmic electrode incorporates power unit and recording unit. Power unit has regulated-current supply connected to Schottky-barrier diode for feeding bias voltage in forward direction; recording unit is connected to voltage output of Schottky-barrier diode. Measuring system may be additionally provided with ultraviolet radiation recording channel. EFFECT: provision for simultaneous check of temperature and ultraviolet radiation; improved serviceability at high temperatures and enhanced sensitivity of transducer. 5 cl, 4 dwg, 2 tbl, 2 ex