THIN-FILM SEMICONDUCTOR ELECTRONIC CAVITY Russian patent published in 2007 - IPC H01L29/68 

FIELD: microelectronics and nanoelectronics; regulating clock carrier in microelectronic and nanoelectronic devices.

SUBSTANCE: structure of proposed thin-film semiconductor electronic cavity incorporates following layers: layer forming ohmic contact with adjacent semiconductor layer; semiconductor layer; metal layer which is in ohmic contact with adjacent semiconductor layer; semiconductor layer; and layer forming ohmic contact with adjacent semiconductor layer; structure also incorporates common electron bunch formed by ohmic contacts of metal layer; this electron bunch is adjacent to semiconductor layers and starts oscillating about equilibrium position as soon as ac voltage is applied across extreme layers and is tuned to resonance whose frequency depends on thickness of metal layer which should be shorter than mean free electron path. Cavity element is produced directly in integrating circuits and its parameters are preset directly in the course of its manufacture.

EFFECT: reduced size of cavity due to use of lithographic method, ability of dispensing with its in-service adjustment.

1 cl, 1 dwg