METHOD FOR MANUFACTURE OF NANOSENSOR Russian patent published in 2009 - IPC H01L21/308 B82B3/00 

FIELD: physics.

SUBSTANCE: invention is related to micro- and nanoelectronics and may be used in production of integral silicon chemical and biosensors for automated control of environment, in ecology, in chemical production, in biology and medicine. Invention is aimed at reduction of nanosensor size, reduction of defectiveness, increased sensitivity, repeatability and efficiency, achievement of compatibility with standard industrial technology VLSI. In method for manufacture of nanosensor, which consists in the fact that dielectric layer is created on silicon substrate, and on surface of dielectric layer silicon layer is formed, from which nanowire with ohm contacts is formed via mask by etching, etching for formation of nanowire with ohm contacts of specified size is carried out in vapours of xenon difluoride with the rate of 36÷100 nm/min, at temperature of 5÷20°C, for 0.3÷1.3 min., silicon layer, from which nanowire is formed with ohm contacts by etching, is created with thickness of 11÷45 nm, and etching mask used is mask of polymer polymethyl methacrylate with thickness of 50÷150 nm.

EFFECT: reduction of nanosensor size, reduction of defectiveness, increased sensitivity, repeatability and efficiency, achievement of compatibility with standard industrial technology VLSI.

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