FIELD: digital techniques; storage devices.
SUBSTANCE: memory element on the basis of semi-conductor-metal-semi-conductor structure consists of the following layers: emitter ohmic contact, emitter semi-conductor layer, base metal layer, collector semi-conductor layer, collector ohmic contact. In base-collector junction area there is an area with high defective situation, which acts as energy trap, in which electrons are trapped and deposited. These processes define the mechanism of writing in current element.
EFFECT: decreased element dimensions, simpler manufacturing, increased stored information and simpler access to it, due to the capability to create either planar or volumetric matrixes, increased storage time, increased quantity of regeneration cycles.
2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| DEVICE FOR ACCUMULATING ELECTRIC CHARGE ON BASIS OF ELECTRONIC PUMP, SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES | 2005 |
|
RU2292608C2 |
| MEMORY GATE | 1988 |
|
RU2075786C1 |
| INTEGRATED BI-MOS RADIATION DETECTOR CELL | 2006 |
|
RU2383968C2 |
| PHOTO-SWITCHABLE AND ELECTRICALLY-SWITCHABLE ORGANIC FIELD-EFFECT TRANSISTOR, MANUFACTURING METHOD THEREOF AND USE THEREOF AS STORAGE DEVICE | 2014 |
|
RU2580905C2 |
| SEMICONDUCTOR DEVICE WITH INTERVALLEY TRANSFER OF ELECTRONS | 2008 |
|
RU2361324C1 |
| HIGH-SPEED LOW-VOLTAGE BIPOLAR GATE BUILT AROUND COMPLEMENTARY STRUCTURES | 1999 |
|
RU2173915C2 |
| METAL SEMICONDUCTOR DEVICE | 2014 |
|
RU2559161C1 |
| BIPOLAR TRANSISTOR BASED ON HETEROEPITAXIAL STRUCTURES AND METHOD OF ITS REALISATION | 2012 |
|
RU2507633C1 |
| SEMICONDUCTOR DEVICE | 1991 |
|
RU2030812C1 |
| MEMORY CELL | 0 |
|
SU1361627A1 |
