FIELD: digital techniques; storage devices.
SUBSTANCE: memory element on the basis of semi-conductor-metal-semi-conductor structure consists of the following layers: emitter ohmic contact, emitter semi-conductor layer, base metal layer, collector semi-conductor layer, collector ohmic contact. In base-collector junction area there is an area with high defective situation, which acts as energy trap, in which electrons are trapped and deposited. These processes define the mechanism of writing in current element.
EFFECT: decreased element dimensions, simpler manufacturing, increased stored information and simpler access to it, due to the capability to create either planar or volumetric matrixes, increased storage time, increased quantity of regeneration cycles.
2 dwg
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