METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SUBMICRON-LENGTH T-SHAPED GATE ELECTRODE Russian patent published in 2002 - IPC

FIELD: microelectronics and nanoelectronics. SUBSTANCE: method for manufacturing this semiconductor device by means of optical lithography involves use of submicron slit in auxiliary insulator-metal layer formed due to gap between two masking metal layers resulting from chemical etching of photoresist-free sections of first metal layer at the same time pickling it under resist through desired depth; it also includes repeated coating of insulator with metal layer, explosion of photoresist followed by plasma-chemical etching of insulator through gap; in the process T-shaped gate electrode is formed by using materials of auxiliary layer and gate electrode metal. Auxiliary insulator-metal layer may be made of SiO₂,Si₃N₄,Al₂O₃ - Cr, Ni, Ti, V, Au, or Al and for gate electrode use may be made of Au or Al. Reduced length of gate electrode combined with its T- configuration minimizes noise ratio and maximizes cutoff frequency. EFFECT: enhanced reproducibility of parameters, facilitated manufacture, reduced cost of device manufacture by common lithography. 2 cl, 12 dwg