FIELD: physics.
SUBSTANCE: invention relates to semiconductor engineering and can be used for finishing chemical-mechanical polishing (HMP) of semiconductor structures made from Indium Arsenide InAs. Method of finishing chemical-mechanical polishing of InAs plates involves plate subjecting to rotating polishing and polishing composition after preliminary diamond processing, the semiconductor surface polishing is carried out using polivel rotating at the rate of 55-65 rpm and pressure of 0.08-0.12 Pa using a polishing suspension of the following composition: sulphamic acid - 3%, tartaric acid - 1%, hydrogen peroxide - 10% to 100%.
EFFECT: technical result consists in improvement of quality of grinding, simplified HMP process, fewer defects in polishing, increased number of high-quality products produced.
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