SEMICONDUCTOR HETEROEPITAXIAL STRUCTURE FOR PHOTODETECTING CELL Russian patent published in 1996 - IPC

FIELD: semiconductors, in particular, construction of heteroepitaxial structure. SUBSTANCE: semiconductor heteroepitaxial structure for photodetecting cell uses a monocrystalline substrate with a heteroepitaxial layer of n-type semiconductor located on it, the layer on the boundary of separation being disrupted. This layer has two layers of highly doped n+-type semiconductor, the thickness of the first layer being equal to that of the disrupted layer. The first layer is located on the boundary of separation with the substrate, and the second layer is a tunnel - opaque one for minority carriers and positioned at a distance equal to the doubled length of Debye shielding from the first one. A p+ layer is formed in the gap between the first and second n+ layers. EFFECT: improved structure. 2 dwg