BIDIRECTIONAL FOUR-CONTACT INTEGRATION COMMUTATOR BASED ON COMPLEMENTARY QUANTUM ZONES Russian patent published in 2007 - IPC H01L27/105 

FIELD: computer engineering and integration electronics.

SUBSTANCE: in accordance to invention, bidirectional four-contact integration commutator based on complementary quantum zones includes semi-isolating GaAs substrate, AlGaAs zones of first and second conductivity type, two AlGaAs zones of inherent conductivity spacers, two GaAs zones of inherent conductivity, two controlling metallic buses, two bidirectional zones of first conductivity type, two bidirectional zones of second conductivity type, two bidirectional metallic buses and zones of dividing dielectric. Following is introduced to the aforementioned device: two additional AlGaAs zones of inherent conductivity spacers, additional AlGaAs zones of first and second conductivity types, two controlling AlGaAs zones of first conductivity type, two controlling AlGaAs zones of second conductivity type, dividing AlGaAs zones of first and second conductivity types, four isolating AlAs zones, third and fourth bidirectional zones of second conductivity type, third and fourth bidirectional zones of first conductivity type, two contact control zones of first conductivity type, two contact control zones of second conductivity type, six additional controlling metallic buses, third and fourth bidirectional metallic buses, isolating the amorphization zones.

EFFECT: increased speed of operation, expanded functional capabilities.

6 dwg