FOUR-CONTACT ELEMENT OF INTEGRATED SWITCH Russian patent published in 2016 - IPC H01L27/105 

FIELD: electronics.

SUBSTANCE: invention relates to integrated electronics, namely to elements of integrated switches. To increase efficiency and expand functional capabilities, into four-contact element of integrated switch, containing semi-insulating GaAs substrate, areas are introduced of GaAs and AlGaAs spacers intrinsic conductivity, barrier region AlGaAs of second conductivity type, area GaAs of second conductivity type, located above it and control metal bus, forming Schottky junction with it, first and second high-alloy areas of second type conductivity, first and second metal buses to make ohmic contacts with high-alloyed areas of second conductivity type, introduced located above area of GaAs second conductivity type and forming with it Schottky junctions, first, second, and third additional control metal buses, third and fourth high-alloyed areas of second conductivity type, third and fourth metal buses, wherein area of GaAs, AlGaAs spacers intrinsic conductivity, barrier area AlGaAs and GaAs second conductivity type have octagonal shape, and control metal buses have zigzag shape consisting of three segments , with mutual arrangement of adjacent segments at angle of 135°.

EFFECT: faster operation and expansion of functional capabilities.

1 cl, 2 dwg