ACTIVE ELEMENT OF INTEGRATING SWITCHING CENTER Russian patent published in 2019 - IPC H01L27/105 

FIELD: electrical engineering.

SUBSTANCE: used to create elements of integrated switches. Essence of the invention consists in that the active element of the integral switch contains a semi-insulating GaAs substrate, barrier AlGaAs region of the second type conductivity, forming with it a Schottky transition control metal bus, AlGaAs region of the intrinsic conductance spacer, GaAs-region of the intrinsic conductivity channel, four commutated metallic buses, four commutated regions of the second type of conductivity, AlGaAs region of the control p-n junction, AlGaAs region of the intrinsic conduction tunnel barrier, isolating AlGaAs regions of intrinsic conductivity, GaAs region of the orthogonal channel of intrinsic conductivity is oriented perpendicular to the GaAs region of the intrinsic conductivity channel, AlGaAs region of the intrinsic conductivity orthogonal spacer, located under the GaAs region of the orthogonal channel of intrinsic conductivity and oriented perpendicular to the GaAs region of the intrinsic conductivity channel.

EFFECT: ensuring the possibility of increasing the speed and reducing energy losses and leakage currents.

1 cl, 3 dwg