THIN-FILM NANOSTRUCTURED ELECTRODE MATERIAL AND METHOD OF PRODUCING SAID MATERIAL Russian patent published in 2011 - IPC H01M4/36 B82B1/00 

Abstract RU 2414771 C1

FIELD: chemistry.

SUBSTANCE: according to the invention, thin-film nanostructured electrode material, which contains nanocrystallites of one phase of rutile solid solutions of tin and titanium oxides incoportated into a matrix of amorphous tin oxide, consists of tin and titanium oxides in the following ratio, in pts. wt: tin (IV) oxide 100, titanium (IV) oxide 3-13, wherein the crystallinity degree of the electrode material (ratio of the mass of the crystalline phase to total mass of the film) is in the range 40-60%. Nanostructured films are obtained by depositing a mixed solution of chlorides of tin and one of the metals Sb, Zr, Pb, Bi, In in aqueous chloride medium on metal substrates and then thermal treatment in air at 350-450°C.

EFFECT: high specific capacitance, high Coulomb efficiency during charging and discharging processes in lithium-ion cells.

7 cl, 8 ex, 1 tbl

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RU 2 414 771 C1

Authors

Roginskaja Juliana Eremeevna

Skundin Aleksandr Mordukhaevich

Kulova Tat'Jana L'Vovna

Dates

2011-03-20Published

2009-11-06Filed