METHOD FOR NON-DESTRUCTIVE CONTROL OF SECONDARY BREAKDOWN RESISTANCE OF POWERFUL MDS TRANSISTORS Russian patent published in 2007 - IPC G01R31/26 

FIELD: micro-electronics, namely control of quality and reliability of semiconductor devices.

SUBSTANCE: intensity of low frequency noise is measured on drain-source contacts with bridged contacts of source-substrate in mode of direct working current of drain transition from external low power source with two current values. Low frequency noise parameter α is determined using expression where and - noise intensity values at currents I₁ and I₂. On basis of value of α, resistance to secondary breakdown is determined.

EFFECT: increased efficiency.

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