SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING PROCESS Russian patent published in 2006 - IPC H01L29/36 H01L21/331 

FIELD: semiconductor engineering.

SUBSTANCE: proposed process for manufacturing semiconductor element with cathode and anode made of semiconductor wafer includes formation of serial layer on this wafer followed by treatment of the latter on cathode end, and only after that its thickness is reduced with the results that only end cutoff region remains from serial layer. In the process serial layer is doped and reduced to end cutoff region so as to enable quantitative optimization of manufacturing process thereby producing thinned semiconductor element. Such quantitative optimization takes into account different parameters and their interrelation, including surface concentration of dope in end cutoff region, dope concentration on anode-facing surface in end cutoff region, concentration of base dope, characteristic length of dope distribution profile drop or rise in end cutoff region, and thickness of base between anode and cathode formed by semiconductor wafer.

EFFECT: optimized thickness of semiconductor element thinned to degree considering its desired electric strength.

6 cl, 7 dwg