BIPOLAR COMBINED-GATE FIELD-EFFECT TRANSISTOR Russian patent published in 2004 - IPC

FIELD: semiconductor devices. SUBSTANCE: bipolar combined-gate field-effect transistor contains first (collector) layer of first type of conduction which carries second layer of second type of conduction, third region of first type of conduction, fourth (emitter) region of second type of conduction arranged in sequence, conducting gate contact located in groove and insulated from semiconductor by layer of dielectric located under gate. Third region borders directly on sidewalls of groove. Transistor incorporates cannel of second type of conduction formed by fourth region of second type of conduction and second layer built into body of semiconductor. Third region is insulated from emitter metal coating by layer of dielectric. EFFECT: enhanced speed, radiation stability, reliability and resistance to effect of snapping, decreased saturation intensity of bipolar combined-gate field-effect transistors. 1 dwg