METHOD FOR DETERMINING POTENTIALLY UNSTABLE SEMICONDUCTOR PRODUCTS ON A PLATE Russian patent published in 2007 - IPC G01R31/26 

FIELD: micro-electronics, possible use in technology for manufacturing semiconductor products having p-n transitions and protected by special films.

SUBSTANCE: method for determining potentially unstable semiconductor products on a plate includes affecting subject semiconductor product with electric field, created by corona discharge, polarity of which corresponds to inversion of p-n transition, and measurement of current through dielectric, resulting from corona discharge. Volt-ampere characteristic or volt-farad characteristic, or ampere-noise characteristic is measured at normal atmospheric pressure and recognized as standard, correspondingly volt-ampere characteristic or volt-farad characteristic is measured, or ampere-noise characteristic with heightened or reduced atmospheric pressure, the characteristic produced at normal atmospheric pressure is respectively compared to analogical characteristic, produced at heightened or reduced atmospheric pressure, and by shape of aforementioned characteristics semiconductor products are divided onto more and less stable ones.

EFFECT: increased precision of diagnostics and increased functional capabilities of control over sc products on a plate using corona discharge.