DIAGNOSTIC METHOD FOR SEMI-CONDUCTING ITEMS BY VOLTAGE-CURRENT CHARACTERISTICS DERIVATIVE Russian patent published in 2009 - IPC G01R31/26 

FIELD: electricity.

SUBSTANCE: invention relates to microelectronics and may be used in semi-conducting items production technologies and for analysing items failed to operate within the customer environment. The invention is concerned with a measurement of voltage-current characteristics (VCC) and calculation of the derivatives 1 and 2 at normal (+25±5°C) and high temperature (50-125)°C. The start of avalanche is defined by the abrupt increase of VCC derivatives 1 and 2 values. The maximum value of VCC derivative 2 is defined within the area of avalanche and voltage U_avalan.min and U_avalan.max development, where the second derivative value is maximal. By the factor value , where δU_avalan.₂₅ is a relative dispersion of break-down voltage values at +25°C, δU_avala.T - relative dispersion of break-down voltage values at high temperatures. Based on the above, highly reliable and potentially unreliable semi-conducting items are identified.

EFFECT: improved accuracy of diagnostics and widening functional semi-conducting items control capabilities.

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