FIELD: treatment of silicon mono-crystals grown by Czochralski method, possibly manufacture of mono-crystalline silicon chips- members of solar batteries and integrated circuits.
SUBSTANCE: method comprises steps of pseudo-squaring of silicon mono-crystal for further grinding ribs of pseudo-squared ingot; cutting mono-crystals by chips. Ribs are ground alternatively; each rib is ground layer by layer in motion direction of tool and in parallel relative to lengthwise axis of ingot.
EFFECT: improved quality of mono-crystalline silicon chips due to safety of near-contour region of worked zone of ingot, lowered material (silicon) losses at working ingots.
3 cl, 1 ex, 1 tbl, 3 dwg
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