FIELD: microelectronics. SUBSTANCE: proposed process of gettering treatment of semiconductor plates includes formation of structurally disturbed layer on nonworking side of plate which functions as external getter by formation of microrelief in process of removal of specified allowance by grinding. Diamond wheel on elastic base is employed in the capacity of cutting tool in process of grinding. Mentioned diamond wheel is deformed in process of removal of specified allowance with outside force in direction orthogonal to treated surface of plate by specified value sufficient to ensure bending by discrete cutting elements ( diamond grains ) of mentioned wheel around entire profile of outline of initial microirregularities of treated surface of semiconductor plate in order to form above-mentioned structurally disturbed layer in the form of regular microrelief on surface of semiconductor plate. In this case value of allowance removed by gettering is comparable with value of cutting grains of diamond wheel and is less than value of initial microirregularities on treated surface of semiconductor plate. As result possibility of emergence of destruction on treated surface in the form of chipping in zone of vertexes of initial microirregularities is ruled out. EFFECT: increased efficiency of gettering treatment thanks to reduced concentration of residual defects on semiconductor plate. 2 dwg
