FIELD: crystal growing. SUBSTANCE: method includes drawing ingot from melt toward seed, detaching ingot from melt, filling up the melt, and drawing following ingot. Method is characterized by that, when ingot is being drawn, its morphology is being controlled and, in case a disruption or interruption of the growth of monocrystal faces is fixed, detachment of ingot from the melt is accomplished. EFFECT: increased yield of valid product due to elevated degree of the melt purity, reduced polycrystalline part in grown ingot, and enabled use of raw material with greater degree of pollution. 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
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|
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