HIGH-TEMPERATURE SUPERCONDUCTIVE EPITAXIAL STRUCTURE Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: for liquid-phase growth of high-temperature superconductive structures there is used substrate which plane of growth surface is deviated from crystallographic plane by angle 1-5 deg. Homogeneity of phase and stoichiometric composition of film is ensured by better correspondence of parameters of substrate lattice and of grown layer. LaGaO₃(001), Mg(100), NdGaO₃(001) are used as substrate. Films grown with specified deviation of growth surface from crystallographic plane display high physical parameters (junction temperature T_j=80-86 K, junction width T_j.w= 2-4 K) and due to this produced structure may be successfully used in manufacture of electronic devices. EFFECT: expanded application field. 1 tbl