VERTICAL STRUCTURE OF SEMICONDUCTOR DEVICES USING NANOTUBES AND METHOD OF MAKING THEM Russian patent published in 2008 - IPC B82B3/00 B82B1/00 

FIELD: nanotechnology.

SUBSTANCE: present invention pertains to vertical structures of semiconductor devices, containing nanotubes as a structural element, and methods of making such structures. Proposal is given of a vertical structure of a semiconductor device, comprising a substrate, forming a horizontal plane at the base, a gate electrode, vertically extending from the substrate, semiconductor nanotubes, running vertically through the gate electrode between their opposite first and second ends, a gate dielectric, electrically insulating the semiconductor nanotubes from the gate electrode, a drain, electrically connected to the second end of the semiconductor nanotubes, and a source contact, located at the same side as the drain, and formed by making a contact window in the insulating layer, insulating it from the gate electrode. The source contact is electrically connected to the first end of the semiconductor nanotubes.

EFFECT: obtaining semiconductor devices with nanotubes as a structural element using technologies, compatible with mass production techniques for making integrated circuit chips.

19 cl, 10 dwg