SEMICONDUCTOR MODULE Russian patent published in 2019 - IPC H01L23/498 H01L23/495 

FIELD: electrical engineering.

SUBSTANCE: semiconductor module includes a semiconductor substrate, a first electrode in contact with a first surface of the semiconductor substrate, a second electrode in contact with a second surface of the semiconductor substrate, a first conductor connected to the first electrode through the first solder layer, and a second conductor connected to the second electrode through the second solder layer. Second electrode overlaps the entire first electrode and wider than the first electrode when viewed in the thickness of the semiconductor substrate direction. Recessed section located along the first electrode outer peripheral edge is located in the second conductor connecting surface in contact with the second solder layer, in order to overlap the outer peripheral edge of the first electrode when viewed at the semiconductor substrate in the thickness direction.

EFFECT: ruled out degradation over time of semiconductor substrate.

8 cl, 19 dwg