FIELD: sensors.
SUBSTANCE: invention relates to magnetoresistive sensors and switching components in magnetoelectronics. Substance: ferromagnetic layers 2 and non-ferromagnetic intermediate layers 3 separating said layers are made as coaxial cylinders enveloping the substrate 1 in the form of a circular wire, or as flat rings applied to the flat side of the substrate in the form of a ring of the same shape, the outer layer can be magnetically secured, and the intermediate layers can also be made of metal or a dielectric material with a tunnel breakdown effect; the applied method for deposition from electrolytes under constant special purification in a magnetic field applying asymmetric current is provided by said structural change and the application of magnetisation by a field from direct current along the circumferential axis of the spin valve.
EFFECT: improved parameters of the spin valve, structural change therein for the purpose of simplifying the method for manufacture, improved method for electrolytic deposition in a magnetic field from a specially purified electrolyte for applicability thereof in producing spin valves.
2 cl, 2 dwg
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Authors
Dates
2022-07-14—Published
2021-04-15—Filed