METHOD FOR PLASMOCHEMICAL ETCHING OF SEMICONDUCTOR AND INSULATING MATERIALS Russian patent published in 2008 - IPC H01L21/3065 

FIELD: electronics; semiconductor devices and methods for etching structures on their wafers.

SUBSTANCE: plasmochemical etching of material is conducted by way of acting on its surface with ion flow of plasma produced from plasma forming gas filling evacuated camber, electron beam being used to act upon plasma forming gas for plasma generation. Constant longitudinal magnetic field with flux density of 20-40 Gs is built on axis, plasma-generating gas pressure is maintained within chamber between 0.01 and 0.1 Pa, and electron beam at current density of 0.1-1 A/cm² ensuring ignition of beam-plasma discharge is used. Etching condition (energy and ion current density) can be controlled ether by modulating electron beam with respect to speed or by varying potential of discharge collector.

EFFECT: enhanced etching efficiency (speed) and quality of etching structures on semiconductor material surface: high degree of etching anisotropy preventing etching under mask, minimized material structure radiation defects brought in during etching.

2 cl, 1 dwg