FIELD: physics.
SUBSTANCE: device for plasma-chemical treatment of materials consists of series-arranged towards the centre of the system and placed in a high-vacuum chamber diametrically opposite sources of electrons and targets made from sputtering material, an electronic-optical system for transmitting a beam of electrons with current density of approximately 0.3 A/cm2, external magnetic field coils with induction along the beam of electrons of the order of 50 Gs, beam-plasma discharge chambers with supply of working gas and a displacement-rotary motion feedthrough lying perpendicular to the path of the beam of electrons with an attached specimen and possibility of applying biasing voltage.
EFFECT: treatment of materials with anisotropy and reduction of defects in the structure with sufficient rate of exposure without using high-frequency voltage sources.
1 dwg
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