FIELD: physics.
SUBSTANCE: method of producing atomically thin monocrystalline films involves extraction of thin monocrystalline fragments from initial layered monocrystals, joining said fragments with a working substrate and formation of atomically thin monocrystalline films. After joining the thin monocrystalline fragments with the working substrate, the working substrate is put into a plasma reactor and layers are successively etched from the thin monocrystalline fragments using a low-energy monochromatic ion beam with energy which is varied during etching. The beam is directed mainly perpendicular to the plane of the working surface.
EFFECT: larger dimensions of atomically thin monocrystalline films.
15 cl, 5 dwg
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