FIELD: metallurgy.
SUBSTANCE: method consists in plasma-chemical synthesis of self-organised silicide nanoclusters of transition ferromagnetic metals by way of pulse formation of counter flows of excited atoms of transition ferromagnetic metal and silicon at the characteristic distance determined by the mean free path of the reacting atoms and plasma Ar with their subsequent deposition on a silicon substrate. Deposition is carried out in gas discharge chamber at pressure P=0.15 atm., voltage drop at charge 120 V and deposition time 20 sec.
EFFECT: increase of deposition time, multi-purpose and economical method.
9 dwg
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