FIELD: metal oxide based materials including complex oxide based homogeneous polycrystalline ones; magnetoelectronics.
SUBSTANCE: proposed antiferromagnetic semiconductor material is characterized in temperature of transfer to paramagnetic state TN = 600-650 K and is essentially solid homogeneous solution of zinc and cobalt oxides Zn1-xCoxO, where X = 0.01 - 0.25; or solid homogeneous solution of zinc, cobalt, and lanthanide oxides Zn1-xCox-yOLnyO, where Ln - Pr, Nd, Sm or Eu; X = 0.01-0.24; Y = 0.01-0.03; X + Y ≤ 0.25. Material obtained is noted for high Curie temperature.
EFFECT: enhanced thermal stability of material possessing semiconductor and antiferromagnetic properties.
1 cl, 2 dwg, 1 tbl, 40 ex
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