MEMORY ELEMENT BASED ON PLANAR HALL EFFECT Russian patent published in 2008 - IPC G11C11/00 

FIELD: electric engineering, possible use in new generation of computers, informational communication systems, intelligent sensors, bio-passports, control systems.

SUBSTANCE: memory element based on planar Hall effect is made on a substrate, on which positioned serially are dielectric layer, recording ferromagnetic film, consisting of first protective layer, ferromagnetic nanostructure with light magnetization axis, directed along the length of film and second protective layer, first isolating layer, record conductor, second isolating layer, and contains a reading cross-shaped magnetic structure based on planar Hall effect on dielectric layer, which structure consists of third protective layer, magnetic nanostructure and fourth protective layer, and also of third isolating layer, positioned on record conductor, fourth isolating layer, positioned above record conductor, on top of which the reading conductor is positioned, mounted above the cross-shaped reading structure based on planar Hall effect and along recording ferromagnetic film.

EFFECT: reduced error of measurements, increased trustworthiness of accumulation and processing of information.

2 dwg